GDM300晶圓研磨（Wafer Grinding）特長(zhǎng)：
·The process from back grinding to wafer mounting continuously by fully automatic system, Which enable to grind till 25um thickness.
采用全自動(dòng)系統(tǒng)，從后磨到貼裝的連續(xù)過程，可研磨至25um厚度。
·With 2 head polishing stage, throughput is almost double compared with 1 polish head system.
2個(gè)磨頭階段，產(chǎn)量幾乎是1個(gè)磨頭系統(tǒng)的兩倍。
·Built in edge trimming system is available as an option for thin wafer process.
內(nèi)置修邊系統(tǒng)可作為薄型晶圓加工的選擇。
·Dual index system, which polishing stage and grinding stage is compleby separated, satisfy the cleanness required for TSV and MEMS process.
雙指標(biāo)體系，拋光階段和研磨階段完全分離，滿足TSV和MEMS工藝所需的清潔。
·Less than Ra1A ultra luminance, ultra mirror surface is possible.
超亮度小于Ra1A，可超鏡面。
