產(chǎn)品介紹
芯能推出的IGBT模塊采用溝槽結構的場截止技術(Trench Field Stop),溝槽元胞結構大大增加器件的功率密度,通過超薄片工藝制程(Ultra Thin Wafer Process)在芯片集電極端使用電場截止型(Field Stop)結構,從而顯著降低器件的飽和導通壓降(Vce(sat))和關斷損耗(Eoff),對比上一代產(chǎn)品,器件功率損耗(導通損耗與開關損耗之和)降低了33%,配合搭載獨立的等電壓快速恢復二極管(FRD),適宜于各類開關應用。 模塊采用標準封裝,產(chǎn)品在嚴酷的環(huán)境下具有穩(wěn)定一致的電參數(shù)和牢固的可靠性。
特點與優(yōu)勢:
低飽和導通壓降(Vce(sat));
低開關損耗(Ets);
高擊穿電壓(BVces);
高短路電流耐量(Icsc);
電參數(shù)重復性與一致性;
高可靠性。
IGBT模塊
XNG15PI24TL1S3
XNG25PI24TL2S3
XNG25PI24TC3AS3
XNG25PI24TC3S3
XNG40PI24TL2S3
XNG40PI24TC3AS3
XNG40PI24TC3S3
XNG50PI24TC4AS5
XNG50PI24TC4S5
XNG75PI24TC4AS5
XNG75PI24TC4S5
XNG100PI24TC4AS5
XNG100PI24TC4S5
XNG50D24TC3S6
XNG150D24KC4A5
XNG200D24KC4A5
XNG200D13TC4S3
XNG50B24TC1S5
XNG75B24TC1S5
XNG100B24TC1S5
XNG150B24TC1S5
XNG200B24KC2S5
XNG200B24UC2S8
XNG300B24KC2S5
XNG300B24UC2S8
XNG450B24KC2S5
XNG200B34KC2S8
XNG300B34KC2S8
XNG300B24KC5A5
XNG450B24KC5A5
XNG600B24KC5A5
XNG300B34KC5A8
XNG450B34KC5A8
XNG600B34KC5A8
XNG300D13TH4A3
XNG400D13TH4A3
XNG400D13TH6A3
XNG660D13TH5A3