| 詳細參數(shù) | |||
|---|---|---|---|
| 品牌 | 世向 | 型號 | AP2N10 |
| 種類 | 絕緣柵型 | 導電方式 | 耗盡型 |
| 溝道類型 | N溝道 | 可測氣體 | 其他 |
| 加工定制 | 否 | 產地 | 深圳 |
Green Device Available
Super Low Gate Charge?Excellent Cdv/dt effect decline
Advanced high cell density Trenchtechnology
TheAP2N10 is the high cell density trenchedN-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small powerswitching and load switch applications.Themeet the RoHS and Green Productrequirement with full function reliability approved.
