ArChine Silicona FMO 1000
椋熷搧绱�(j铆)浜岀敳鍩虹娌�
鐢�(ch菐n)鍝佹弿杩�
浜岀敳鍩虹娌癸紝鍖栧(xu茅)鍚嶇ū鑱氫簩鐢插熀纭呮哀鐑�锛屽垎瀛愬紡鏄�
(CH3)3SiO[(CH3)2SiO]n-Si(CH3)3
鎶€琛�(sh霉)鎸囨(bi膩o)
|
瑕�(gu墨)鏍� |
ArChine Silicona FMO 1000 |
|
绮樺害(25掳C) cst |
1000卤10% |
|
闁冮粸(di菐n) 掳C锛�鈮� |
320 |
|
鍌鹃粸(di菐n)掳C锛�鈮� |
-47 |
|
姣旈噸锛�25掳C锛� g/cm3 |
0.972 |
|
鎻櫦(f膩)浠�(150掳C锛�3h)% 鈮� |
0.8 |
|
绮樻韩绯绘暩(sh霉) |
0.58~0.62 |
|
鎶樺厜鐜囷紙25掳C锛� |
1.4020~1.4053 |
|
浠嬮浕甯告暩(sh霉)锛�25掳C,50Hz锛� |
2.72~2.78 |
|
灏�(d菐o)鐔辩郴鏁�(sh霉) W/(m.K) |
0.1590 |